FQU7N10LTU original stock_Cheapest FQU7N10LTU_ON Semiconductor agent channel source

MOSFETs - Single

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Specifications

Description	Details
Series	QFET®
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	350mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	290 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

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