SI7703EDN-T1-GE3 original stock_Cheapest SI7703EDN-T1-GE3_Vishay Siliconix agent channel source

MOSFETs - Single

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	48mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 800µA
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	1.3W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

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Price advantage, SI7703EDN-T1-GE3 is available in stock and can be delivered on the same day

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