TSM9N90ECI C0G original stock_Cheapest TSM9N90ECI C0G_Taiwan Semiconductor Corporation agent channel source

MOSFETs - Single

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In Stock：3,788(Ref. price)

Qty.	Unit Price	Ext. Price
1	$3.18160	$3.18160

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2470 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	89W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ITO-220AB
Package / Case	TO-220-3 Full Pack, Isolated Tab

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Price advantage, TSM9N90ECI C0G is available in stock and can be delivered on the same day

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