RJK1003DPP-A0#T2 original stock_Cheapest RJK1003DPP-A0#T2_Renesas Electronics America Inc agent channel source

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	50A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4150 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	25W (Ta)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220FPA
Package / Case	TO-220-3 Full Pack

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Price advantage, RJK1003DPP-A0#T2 is available in stock and can be delivered on the same day

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