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Transistor、Photovoltaic Output
H11G2M_F132 Picture

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H11G2M_F132

  • ON Semiconductor
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  • OPTOISO 4.17KV DARL W/BASE 6DIP
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Specifications
DescriptionDetails
Series
-
Package
Tube
Number of Channels
1
Voltage - Isolation
4170Vrms
Current Transfer Ratio (Min)
1000% @ 10mA
Current Transfer Ratio (Max)
-
Turn On / Turn Off Time (Typ)
5µs, 100µs
Rise / Fall Time (Typ)
-
Input Type
DC
Output Type
Darlington with Base
Voltage - Output (Max)
80V
Current - Output / Channel
-
Voltage - Forward (Vf) (Typ)
1.3V
Current - DC Forward (If) (Max)
60 mA
Vce Saturation (Max)
1V
Operating Temperature
-40°C ~ 100°C
Mounting Type
Through Hole
Package / Case
6-DIP (0.300", 7.62mm)
Supplier Device Package
6-DIP
Other
Price advantage, H11G2M_F132 is available in stock and can be delivered on the same day
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