2N4339-E3 original stock_Cheapest 2N4339-E3_Vishay Siliconix agent channel source

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	50 V
Drain to Source Voltage (Vdss)	-
Current - Drain (Idss) @ Vds (Vgs=0)	500 µA @ 15 V
Current Drain (Id) - Max	-
Voltage - Cutoff (VGS off) @ Id	600 mV @ 100 nA
Input Capacitance (Ciss) (Max) @ Vds	7pF @ 15V
Resistance - RDS(On)	-
Power - Max	300 mW
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-206AA, TO-18-3 Metal Can
Supplier Device Package	TO-206AA (TO-18)

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Price advantage, 2N4339-E3 is available in stock and can be delivered on the same day

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