RJP4301APP-M0#T2 original stock_Cheapest RJP4301APP-M0#T2_Renesas Electronics America Inc agent channel source

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	430 V
Current - Collector (Ic) (Max)	-
Current - Collector Pulsed (Icm)	200 A
Vce(on) (Max) @ Vge, Ic	10V @ 26V, 200A
Power - Max	30 W
Switching Energy	-
Input Type	Standard
Gate Charge	-
Td (on/off) @ 25°C	50ns/100ns
Test Condition	300V, 200A, 30Ohm, 26V
Reverse Recovery Time (trr)	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220FL

Other

Price advantage, RJP4301APP-M0#T2 is available in stock and can be delivered on the same day

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