RJP60F5DPM-00#T1 original stock_Cheapest RJP60F5DPM-00#T1_Renesas Electronics America Inc agent channel source

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	80 A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 40A
Power - Max	45 W
Switching Energy	-
Input Type	Standard
Gate Charge	74 nC
Td (on/off) @ 25°C	53ns/90ns
Test Condition	400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3PFM, SC-93-3
Supplier Device Package	TO-3PFM

Other

Price advantage, RJP60F5DPM-00#T1 is available in stock and can be delivered on the same day

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