VS-GB100TP120N original stock_Cheapest VS-GB100TP120N_Vishay General Semiconductor - Diodes Division agent channel source

Transistors - IGBTs - Modules

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	200 A
Power - Max	650 W
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 100A
Current - Collector Cutoff (Max)	5 mA
Input Capacitance (Cies) @ Vce	7.43 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	INT-A-Pak
Supplier Device Package	INT-A-PAK

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Price advantage, VS-GB100TP120N is available in stock and can be delivered on the same day

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