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MOSFETs - Single
JAN2N6788U Picture

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JAN2N6788U

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In Stock:19,158(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
Military, MIL-PRF-19500/555
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
350mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
800mW (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
18-ULCC (9.14x7.49)
Package / Case
18-CLCC
Other
Price advantage, JAN2N6788U is available in stock and can be delivered on the same day
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