RJK6012DPP-A0#T2 original stock_Cheapest RJK6012DPP-A0#T2_Renesas Electronics America Inc agent channel source

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.37Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	765 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	29.5W (Ta)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220FP
Package / Case	TO-220-3 Full Pack

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