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RM12N650T2 Picture

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RM12N650T2

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In Stock:18,204(Ref. price)
Qty.Unit PriceExt. Price
1
$0.64320
$0.64320
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
360mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
101W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Other
Price advantage, RM12N650T2 is available in stock and can be delivered on the same day
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