DMN10H099SFG-13 original stock_Cheapest DMN10H099SFG-13_Diodes Incorporated agent channel source

MOSFETs - Single

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In Stock：17,400(Ref. price)

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1	$0.25264	$0.25264

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	80mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25.2 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1172 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	980mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerDI3333-8
Package / Case	8-PowerVDFN

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