IPP06CN10NGXKSA1 original stock_Cheapest IPP06CN10NGXKSA1_Infineon Technologies agent channel source

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,925(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	OptiMOS™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	6.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs	139 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9200 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3

Other

Price advantage, IPP06CN10NGXKSA1 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
SSM6J422TU,LF	Toshiba Semiconductor and Storage	MOSFETs - Single	Datasheet	MOSFET P-CH 20V 4A UF6	No price	In Stock:4236
MVGSF1N03LT1G	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 30V 1.6A SOT23	$0.7425	In Stock:3998
NVMFS5C645NLWFT1G	ON Semiconductor	MOSFETs - Single	Datasheet	POWER FIELD-EFFECT TRANSISTOR	$0.47520	In Stock:5476
BUK9618-55A,118	NXP USA Inc.	MOSFETs - Single	Datasheet	MOSFET N-CH 55V 61A D2PAK	No price	In Stock:18138
FDME430NT	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 30V 6A MICROFET1.6	No price	In Stock:18140