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IPD65R950C6ATMA1 Picture

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IPD65R950C6ATMA1

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In Stock:17,666(Ref. price)
Qty.Unit PriceExt. Price
1
$0.44550
$0.44550
Documents
Specifications
DescriptionDetails
Series
CoolMOS™ C6
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
15.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
328 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
37W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Other
Price advantage, IPD65R950C6ATMA1 is available in stock and can be delivered on the same day
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