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IPA100N08N3GXKSA1 Picture

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IPA100N08N3GXKSA1

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In Stock:18,200(Ref. price)
Qty.Unit PriceExt. Price
1
$0.65280
$0.65280
Documents
Specifications
DescriptionDetails
Series
OptiMOS™
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
10mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2410 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-111
Package / Case
TO-220-3 Full Pack
Other
Price advantage, IPA100N08N3GXKSA1 is available in stock and can be delivered on the same day
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