HUF75545S3 original stock_Cheapest HUF75545S3_ON Semiconductor agent channel source

MOSFETs - Single

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Specifications

Description	Details
Series	UltraFET™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	10mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	235 nC @ 20 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3750 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	270W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

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