RM17N800T2 original stock_Cheapest RM17N800T2_Rectron USA agent channel source

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：17,306(Ref. price)

Qty.	Unit Price	Ext. Price
1	$1.49940	$1.49940

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	17A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	320mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2060 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	260W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3

Other

Price advantage, RM17N800T2 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
RHU002N06FRAT106	Rohm Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 60V 200MA UMT3	$0.475	In Stock:3313
RM2333	Rectron USA	MOSFETs - Single	Datasheet	MOSFET P-CHANNEL 12V 6A SOT23	$0.05148	In Stock:17668
SI5855DC-T1-E3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET P-CH 20V 2.7A 1206-8	No price	In Stock:17672
SPD15P10P G	Infineon Technologies	MOSFETs - Single	Datasheet	P-CHANNEL POWER MOSFET	$0.64320	In Stock:17674
IRFI610G	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET N-CH 200V 2.6A TO220-3	No price	In Stock:17676