SQP100P06-9M3L_GE3 original stock_Cheapest SQP100P06-9M3L_GE3_Vishay Siliconix agent channel source

MOSFETs - Single

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In Stock：329(Ref. price)

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Specifications

Description	Details
Series	Automotive, AEC-Q101, TrenchFET®
Package	Cut Tape (CT)
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	300 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	12010 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	187W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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Price advantage, SQP100P06-9M3L_GE3 is available in stock and can be delivered on the same day

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