TK8R2A06PL,S4X original stock_Cheapest TK8R2A06PL,S4X_Toshiba Semiconductor and Storage agent channel source

MOSFETs - Single

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In Stock：1,420(Ref. price)

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Specifications

Description	Details
Series	U-MOSIX-H
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	11.4mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id	2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	28.4 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1990 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	36W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack

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