SISS08DN-T1-GE3 original stock_Cheapest SISS08DN-T1-GE3_Vishay Siliconix agent channel source

MOSFETs - Single

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In Stock：5,044(Ref. price)

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Specifications

Description	Details
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	53.9A (Ta), 195.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.23mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	82 nC @ 10 V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	3670 pF @ 12.5 V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 65.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Package / Case	PowerPAK® 1212-8S

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