NTD50N03R-035 original stock_Cheapest NTD50N03R-035_ON Semiconductor agent channel source

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	7.8A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 11.5V
Rds On (Max) @ Id, Vgs	12mOhm @ 30A, 11.5V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 11.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	750 pF @ 12 V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta), 50W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Stub Leads, IPak

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