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MOSFETs - Single
GA05JT03-46 Picture

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GA05JT03-46

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In Stock:18,564(Ref. price)
Qty.Unit PriceExt. Price
1
$66.87050
$66.87050
Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
FET Type
-
Technology
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)
300 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
240mOhm @ 5A
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
20W (Tc)
Operating Temperature
-55°C ~ 225°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-46
Package / Case
TO-46-3
Other
Price advantage, GA05JT03-46 is available in stock and can be delivered on the same day
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