SI6467BDQ-T1-GE3 original stock_Cheapest SI6467BDQ-T1-GE3_Vishay Siliconix agent channel source

MOSFETs - Single

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	12.5mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 450µA
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 4.5 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	8-TSSOP
Package / Case	8-TSSOP (0.173", 4.40mm Width)

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Price advantage, SI6467BDQ-T1-GE3 is available in stock and can be delivered on the same day

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