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IPD60R380E6ATMA2 Picture

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IPD60R380E6ATMA2

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In Stock:16,168(Ref. price)
Qty.Unit PriceExt. Price
1
$0.57000
$0.57000
Documents
Specifications
DescriptionDetails
Series
CoolMOS™
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
3.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 100 V
FET Feature
Super Junction
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Other
Price advantage, IPD60R380E6ATMA2 is available in stock and can be delivered on the same day
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