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2SK3821-E Picture

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2SK3821-E

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In Stock:20,018(Ref. price)
Qty.Unit PriceExt. Price
1
$2.66950
$2.66950
Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
33mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4200 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
1.65W (Ta), 65W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
SMP
Package / Case
TO-220-3, Short Tab
Other
Price advantage, 2SK3821-E is available in stock and can be delivered on the same day
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