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FDZ3N513ZT Picture

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FDZ3N513ZT

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In Stock:29,352(Ref. price)
Qty.Unit PriceExt. Price
1
$0.31040
$0.31040
Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
1.1A
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
462mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1 nC @ 4.5 V
Vgs (Max)
+5.5V, -300mV
Input Capacitance (Ciss) (Max) @ Vds
85 pF @ 15 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 125°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-WLCSP (1x1)
Package / Case
4-XFBGA, WLCSP
Other
Price advantage, FDZ3N513ZT is available in stock and can be delivered on the same day
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