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IPP016N08NF2SAKMA1

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In Stock:20,723(Ref. price)
Qty.Unit PriceExt. Price
1
$3.94560
$3.94560
Documents
Specifications
DescriptionDetails
Series
StrongIRFET™ 2
Package
-
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
35A (Ta), 196A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.8V @ 267µA
Gate Charge (Qg) (Max) @ Vgs
255 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
12000 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Other
Price advantage, IPP016N08NF2SAKMA1 is available in stock and can be delivered on the same day
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