NILMS4501NR2 original stock_Cheapest NILMS4501NR2_ON Semiconductor agent channel source

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	24 V
Current - Continuous Drain (Id) @ 25°C	9.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	13mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 6 V
FET Feature	Current Sensing
Power Dissipation (Max)	1.4W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-PLLP
Package / Case	4-PowerDFN

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