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BSC130P03LSGAUMA1 Picture

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BSC130P03LSGAUMA1

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In Stock:20,860(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
OptiMOS™
Package
Bulk
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 22.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
13mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id
2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
73.1 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
3.67 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-3
Package / Case
8-PowerVDFN
Other
Price advantage, BSC130P03LSGAUMA1 is available in stock and can be delivered on the same day
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