ZVP0120AS original stock_Cheapest ZVP0120AS_Diodes Incorporated agent channel source

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	110mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	32Ohm @ 125mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	100 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	-
Mounting Type	Through Hole
Supplier Device Package	TO-92
Package / Case	TO-226-3, TO-92-3 (TO-226AA)

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