SIHG22N60E-GE3 original stock_Cheapest SIHG22N60E-GE3_Vishay Siliconix agent channel source

MOSFETs - Single

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In Stock：1,206(Ref. price)

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1920 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	227W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3

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Price advantage, SIHG22N60E-GE3 is available in stock and can be delivered on the same day

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