IXFC10N80P original stock_Cheapest IXFC10N80P_IXYS agent channel source

MOSFETs - Single

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Specifications

Description	Details
Series	PolarHV™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Through Hole
Supplier Device Package	ISOPLUS220™
Package / Case	ISOPLUS220™

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Price advantage, IXFC10N80P is available in stock and can be delivered on the same day

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