SSM3J15FV,L3F original stock_Cheapest SSM3J15FV,L3F_Toshiba Semiconductor and Storage agent channel source

MOSFETs - Single

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Specifications

Description	Details
Series	π-MOSVI
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4V
Rds On (Max) @ Id, Vgs	12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id	1.7V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9.1 pF @ 3 V
FET Feature	-
Power Dissipation (Max)	150mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	VESM
Package / Case	SOT-723

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