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IPU80R1K0CEAKMA1 Picture

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IPU80R1K0CEAKMA1

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In Stock:18,850(Ref. price)
Qty.Unit PriceExt. Price
1
$0.72647
$0.72647
Documents
Specifications
DescriptionDetails
Series
CoolMOS™ CE
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
950mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id
3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
785 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3-341
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Other
Price advantage, IPU80R1K0CEAKMA1 is available in stock and can be delivered on the same day
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