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MOSFETs - Single
IPW65R048CFDAFKSA1 Picture

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IPW65R048CFDAFKSA1

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In Stock:2,358(Ref. price)
Qty.Unit PriceExt. Price
1
$15.41430
$15.41430
Documents
Specifications
DescriptionDetails
Series
Automotive, AEC-Q101, CoolMOS™
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
63.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
48mOhm @ 29.4A, 10V
Vgs(th) (Max) @ Id
4.5V @ 2.9mA
Gate Charge (Qg) (Max) @ Vgs
270 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
500W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3
Other
Price advantage, IPW65R048CFDAFKSA1 is available in stock and can be delivered on the same day
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