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MOSFETs - Single
RM80N80T2 Picture

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RM80N80T2

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In Stock:18,834(Ref. price)
Qty.Unit PriceExt. Price
1
$0.49400
$0.49400
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
80A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
170W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Other
Price advantage, RM80N80T2 is available in stock and can be delivered on the same day
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