NTB30N20T4G original stock_Cheapest NTB30N20T4G_ON Semiconductor agent channel source

MOSFETs - Single

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In Stock：17,880(Ref. price)

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1	$1.27300	$1.27300

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	30A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	81mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	100 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2.335 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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