SI1315DL-T1-GE3 original stock_Cheapest SI1315DL-T1-GE3_Vishay Siliconix agent channel source

MOSFETs - Single

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8 V
Current - Continuous Drain (Id) @ 25°C	900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	336mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.4 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	112 pF @ 4 V
FET Feature	-
Power Dissipation (Max)	300mW (Ta), 400mW (Tc)
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-323
Package / Case	SC-70, SOT-323

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