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MOSFETs - Single
TPH3208PS Picture

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TPH3208PS

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  • GANFET N-CH 650V 20A TO220AB
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In Stock:4,175(Ref. price)
Qty.Unit PriceExt. Price
1
$10.94400
$10.94400
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
130mOhm @ 13A, 8V
Vgs(th) (Max) @ Id
2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 8 V
Vgs (Max)
±18V
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Other
Price advantage, TPH3208PS is available in stock and can be delivered on the same day
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