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IRLR8259PBF Picture

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IRLR8259PBF

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In Stock:19,128(Ref. price)
Qty.Unit PriceExt. Price
1
$0.30720
$0.30720
Documents
Specifications
DescriptionDetails
Series
HEXFET®
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
57A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.7mOhm @ 21A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
48W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D-Pak
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Other
Price advantage, IRLR8259PBF is available in stock and can be delivered on the same day
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