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MOSFETs - Single
TPH3206PSB Picture

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TPH3206PSB

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  • GANFET N-CH 650V 16A TO220AB
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In Stock:3,951(Ref. price)
Qty.Unit PriceExt. Price
1
$10.46640
$10.46640
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 10A, 8V
Vgs(th) (Max) @ Id
2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
6.2 nC @ 4.5 V
Vgs (Max)
±18V
Input Capacitance (Ciss) (Max) @ Vds
720 pF @ 480 V
FET Feature
-
Power Dissipation (Max)
81W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Other
Price advantage, TPH3206PSB is available in stock and can be delivered on the same day
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