TP65H150LSG original stock_Cheapest TP65H150LSG_Transphorm agent channel source

MOSFETs - Single

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PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

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In Stock：1,109(Ref. price)

Qty.	Unit Price	Ext. Price
1	$9.71850	$9.71850

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	7.1 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	576 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	3-PQFN (8x8)
Package / Case	3-PowerDFN

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Price advantage, TP65H150LSG is available in stock and can be delivered on the same day

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