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MOSFETs - Single
IPA80R650CEXKSA2 Picture

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IPA80R650CEXKSA2

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In Stock:3,142(Ref. price)
Qty.Unit PriceExt. Price
1
$2.02560
$2.02560
Documents
Specifications
DescriptionDetails
Series
CoolMOS™
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id
3.9V @ 470µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1100 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
33W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3F
Package / Case
TO-220-3 Full Pack
Other
Price advantage, IPA80R650CEXKSA2 is available in stock and can be delivered on the same day
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