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AUIRFS3306

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In Stock:19,284(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
HEXFET®
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
125 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4520 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
230W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other
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