SISS63DN-T1-GE3 original stock_Cheapest SISS63DN-T1-GE3_Vishay Siliconix agent channel source

MOSFETs - Single

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In Stock：56,386(Ref. price)

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Specifications

Description	Details
Series	TrenchFET® Gen III
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	35.1A (Ta), 127.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	2.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	236 nC @ 8 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	7080 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	5W (Ta), 65.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8S
Package / Case	PowerPAK® 1212-8S

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