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MOSFETs - Single
IPW65R029CFD7XKSA1 Picture

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IPW65R029CFD7XKSA1

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In Stock:17,280(Ref. price)
Qty.Unit PriceExt. Price
1
$12.20100
$12.20100
Documents
Specifications
DescriptionDetails
Series
CoolMOS™
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
69A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
29mOhm @ 35.8A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1.79mA
Gate Charge (Qg) (Max) @ Vgs
145 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7149 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
305W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Package / Case
TO-247-3
Other
Price advantage, IPW65R029CFD7XKSA1 is available in stock and can be delivered on the same day
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