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MOSFETs - Single
IXTH68P20T Picture

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IXTH68P20T

  • IXYS
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  • MOSFET P-CH 200V 68A TO247
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In Stock:20,752(Ref. price)
Qty.Unit PriceExt. Price
1
$14.12320
$14.12320
Documents
Specifications
DescriptionDetails
Series
TrenchP™
Package
Tube
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
55mOhm @ 34A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
380 nC @ 10 V
Vgs (Max)
±15V
Input Capacitance (Ciss) (Max) @ Vds
33400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
568W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 (IXTH)
Package / Case
TO-247-3
Other
Price advantage, IXTH68P20T is available in stock and can be delivered on the same day
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