TK040Z65Z,S1F original stock_Cheapest TK040Z65Z,S1F_Toshiba Semiconductor and Storage agent channel source

MOSFETs - Single

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In Stock：3,534(Ref. price)

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Specifications

Description	Details
Series	DTMOSVI
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	57A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	40mOhm @ 28.5A, 10V
Vgs(th) (Max) @ Id	4V @ 2.85mA
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	6250 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	360W (Tc)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package / Case	TO-247-4

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