NTMTSC1D6N10MCTXG original stock_Cheapest NTMTSC1D6N10MCTXG_ON Semiconductor agent channel source

MOSFETs - Single

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In Stock：19,126(Ref. price)

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	35A (Ta), 267A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	1.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id	4V @ 650µA
Gate Charge (Qg) (Max) @ Vgs	106 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7630 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	5.1W (Ta), 291W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TDFNW (8.3x8.4)
Package / Case	8-PowerTDFN

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